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multigate nanowire field-effect transistors

Based on

1 Articles
2014 Most recent source

Composition

1

indium(III) phosphide

indium phosphide
Type
Formula InP
Role
2

aluminium indium arsenide

aluminium indium arsenide indium aluminum arsenide
Type
Formula Al0.48In0.52As
Role
3

indium gallium arsenide

Type Single Compound
Formula In0.7Ga0.3As
Role channels
4

indium(III) phosphide

indium phosphide
Type
Formula InP
Role
5

indium aluminium arsenide

indium gallium arsenide InGaAs
Type
Formula In0.53Ga0.47As
Role
6

aluminium oxide

aluminum oxide alumina
Type
Formula Al2O3
Role
7

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type
Formula HfO2
Role
8

titanium

Type
Formula Ti
Role
9

gold

Type
Formula Au
Role

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • indium gallium arsenide
  • aluminium indium arsenide
  • indium(III) phosphide
Product

multigate nanowire field-effect transistors

Method 2

Type: Physical formation
Source:
Starting materials
  • indium gallium arsenide
  • aluminium indium arsenide
  • indium(III) phosphide
Product

multigate nanowire field-effect transistors

Method 3

Type: Physical formation
Source:
Starting materials
  • indium gallium arsenide
  • aluminium indium arsenide
  • indium(III) phosphide
Product

multigate nanowire field-effect transistors

Method 4

Type: Physical formation
Source:
Starting materials
  • indium gallium arsenide
  • aluminium indium arsenide
  • indium(III) phosphide
Product

multigate nanowire field-effect transistors

Method 5

Type: Physical formation
Source:
Starting materials
  • indium gallium arsenide
  • aluminium indium arsenide
  • indium(III) phosphide
Product

multigate nanowire field-effect transistors

References

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