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multilayer GaTe field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

p-doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

gallium(II) telluride

gallium telluride
Type
Formula GaTe
Role
4

chromium

Type Single Compound
Formula Cr
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • gallium(II) telluride
  1. CAaNBM7pWyw
  2. dU6auTfKkKs3fYh0
Product

multilayer GaTe field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • gallium(II) telluride
  1. 4W9IkGU6UkB
  2. 3zPFusAutovYpjZf
Product

multilayer GaTe field-effect transistor

References

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