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multilayer GaTe field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

p-doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

gallium(II) telluride

gallium telluride
Type
Formula GaTe
Role
4

chromium

Type Single Compound
Formula Cr
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
charge concentration

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Applications

Area Application Source
electronics

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Characterization

Method Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • gallium(II) telluride
  1. 0cTMArmakn4
  2. Jho2Lbg0Q7GTElIK
Product

multilayer GaTe field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • gallium(II) telluride
  1. tNBbG15Mnqj
  2. 2cOwvwKPfXWrW5PN
Product

multilayer GaTe field-effect transistor

References

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