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Schottky diode device

Based on

1 Articles
2014 Most recent source

Composition

1

B-doped Si

p-type Si
Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

2-layers of molybdenum disulfide nanosheets

2-L MoS2 nanosheets
Type
Formula
Role
4

gold/titanium bilayer

Au/Ti bilayer Ti/Au film
Type Nano Material
Formula
Role Ohmic contacts
5

palladium

Type Single Compound
Formula Pd
Role Schottky gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • B-doped Si
  1. ZRymP1Xt107ljZh8vPGmQbYYf
Product

Schottky diode device

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • B-doped Si
  1. Pu46OIGyjiKDwKpf798TrOw1V
Product

Schottky diode device

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • B-doped Si
  1. 5hU65Ex0uPo094ldYcs8x8uup
Product

Schottky diode device

Size: not specified

Medium/Support: none

References

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