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field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

poly(3,4-ethylenedioxythiophene) nanowire

PEDOT nanowire
Type Nano Material
Formula
Role drain
4

poly(3,4-ethylenedioxythiophene) nanowire

PEDOT nanowire
Type Nano Material
Formula
Role source
5

polyethersulfone

PES
Type Polymer
Formula
Role substrate
6

TIPS-PEN nanowire

Type Nano Material
Formula
Role p-channel

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Method Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • 3,4-ethylenedioxylthiophene
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  5. qqmT578E29qb
Product

field-effect transistor

References

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