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few-layer MoS2 photodetector with ferroelectric polarization gating

Based on

1 Articles
2015 Most recent source

Composition

1

degenerately doped silicon

Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
3

few-layer molybdenum(IV) sulfide monolayer

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Type Nano Material
Formula
Role channel layer
4

chromium

Type Single Compound
Formula Cr
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain
7

poly(vinylidene fluoride-trifluoroethylene)

P(VDF-TrFE)
Type Polymer
Formula
Role ferroelectric layer
8

aluminium

aluminum
Type Single Compound
Formula Al
Role semitransparent top gate

Properties

General physical and chemical properties

Property Value Source
detectivity

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Sensor properties

Type of sensor Sensor property Source
light sensor

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Applications

Area Application Source
sensors (excluding biosensors)

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silica-coated doped silicon
  • molybdenum(IV) sulfide
Product

few-layer MoS2 photodetector with ferroelectric polarization gating

References

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