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molybdenum disulfide-copper phthalocyanine field effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

heavily doped p++ Si

Type Complex Compound
Formula
Role back gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

molybdenum disulfide flake

MoS2 flake
Type Nano Material
Formula
Role conducting layer
4

titanium

Type Single Compound
Formula Ti
Role source
5

titanium

Type Single Compound
Formula Ti
Role gate
6

copper phthalocyanine

astra blue fragment HT-30 CuPc
Type Single Compound
Formula C36H20CuN4
Role photoactive layer

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
Product

molybdenum disulfide-copper phthalocyanine field effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
Product

molybdenum disulfide-copper phthalocyanine field effect transistor

Method 3

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
Product

molybdenum disulfide-copper phthalocyanine field effect transistor

Method 4

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
Product

molybdenum disulfide-copper phthalocyanine field effect transistor

Method 5

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
Product

molybdenum disulfide-copper phthalocyanine field effect transistor

References

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