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graphene-IGZO vertical thin-film transistor

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon-rich nitride

silicon mononitride silicon nitride
Type Single Compound
Formula SiN
Role substrate
3

gold

Type Single Compound
Formula Au
Role drain
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

indium gallium zinc oxide

IGZO
Type
Formula
Role
6

graphene nanosheets

graphene sheets graphene
Type
Formula
Role
7

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate dielectrics
8

gold

Type Single Compound
Formula Au
Role source
9

titanium

Type Single Compound
Formula Ti
Role adhesion layer
10

gold

Type Single Compound
Formula Au
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gold
  • Si/SiN substrate
Product

graphene-IGZO vertical thin-film transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • gold
  • Si/SiN substrate
Product

graphene-IGZO vertical thin-film transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • gold
  • Si/SiN substrate
Product

graphene-IGZO vertical thin-film transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • gold
  • Si/SiN substrate
Product

graphene-IGZO vertical thin-film transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • gold
  • Si/SiN substrate
Product

graphene-IGZO vertical thin-film transistor

Size: not specified

Medium/Support: none

References

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