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planar graphene/SiC field effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

silicon carbide

carborundum
Type Single Compound
Formula SiC
Role substrate
2

multilayer epitaxial graphene

multilayer graphene few-layer graphene graphene MEG MLG
Type
Formula
Role
3

silicon(III) oxide

Type
Formula Si2O3
Role
4

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate dielectrics
5

aluminium

aluminum
Type
Formula Al
Role
6

chromium

Type Single Compound
Formula Cr
Role adhesion layer
7

chromium

Type Single Compound
Formula Cr
Role adhesion layer
8

gold

Type Single Compound
Formula Au
Role source
9

gold

Type Single Compound
Formula Au
Role drain
10

gold

Type Single Compound
Formula Au
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on drain voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon carbide
Product

planar graphene/SiC field effect transistor

Size: not specified

Medium/Support: none

References

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