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MoS2-based-field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
2

gold

Type Single Compound
Formula Au
Role source
3

gold

Type Single Compound
Formula Au
Role drain
4

edge-rich 2H-MoS2 ultrathin nanosheets

chemically exfoliated MoS2 nanosheets molybdenum(IV) sulfide nanosheets 2D crystals of molybdenum sulfide molybdenum(II) sulfide nanosheets molybdenum disulfide nanosheets molybdenum disulfide monolayers molybdenum sulfide nanosheets multilayer molybdenum sulfide molybdenum disulfide flakes MoS2 nanometer-sized sheets ultrathin MoS2 nanosheets multilayered MoS2 flakes multilayer MoS2 flakes few-layer MoS2 flakes atomically thin MoS2 MoS2 nanostructures 2D MoS2 nanolayers multilayered MoS2 MoS2 nanosheets MoS2 nanoflakes exfoliated MoS2 multilayer MoS2 sheet-like MoS2 monolayer MoS2 MoS2 sheets MoS2 flakes MoS2 slabs MoS2 NS MoS2 NS ce-MoS2
Type
Formula
Role
5

silicon

Type Single Compound
Formula Si
Role back gate

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  1. YQ45
Product

MoS2-based-field-effect transistor

References

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