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single walled carbon nanotube-based thin film transistor device

Based on

1 Articles
2015 Most recent source

Composition

1

n-doped Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

Ti/Au

Type Complex Compound
Formula
Role source
4

Ti/Au

Type Complex Compound
Formula
Role drain
5

single walled carbon nanotubes

SWCNT
Type Nano Material
Formula
Role channels

Properties

General physical and chemical properties

Property Value Source
conductance dependent on sweep direction

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gold
  • titanium
  • n-doped Si/SiO2
Product

single walled carbon nanotube-based thin film transistor device

Method 2

Type: Physical formation
Source:
Starting materials
  • gold
  • titanium
  • n-doped Si/SiO2
Product

single walled carbon nanotube-based thin film transistor device

Method 3

Type: Physical formation
Source:
Starting materials
  • gold
  • titanium
  • n-doped Si/SiO2
Product

single walled carbon nanotube-based thin film transistor device

Method 4

Type: Physical formation
Source:
Starting materials
  • gold
  • titanium
  • n-doped Si/SiO2
Product

single walled carbon nanotube-based thin film transistor device

References

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