Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

Ag4In3Sb67Te26-based projected phase-change memory device

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type
Formula Si
Role
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

titanium nitride

Type Single Compound
Formula TiN
Role projection material
4

AIST

Type Single Compound
Formula Ag4In3Sb67Te26
Role phase-change material
5

zinc sulfide/silica

ZnS/SiO2
Type Complex Compound
Formula
Role capping layer
6

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role

Properties

General physical and chemical properties

Property Value Source
resistance

0 more entry available to subscribes only.

Or, view sample content

Applications

Area Application Source
data storage

0 more entry available to subscribes only.

Or, view sample content

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • Si wafer
  • titanium nitride
Product

Ag4In3Sb67Te26-based projected phase-change memory device

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial