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Ag4In3Sb67Te26-based projected phase-change memory device

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type
Formula Si
Role
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

titanium nitride

Type Single Compound
Formula TiN
Role projection material
4

germanium telluride

c-GeTe
Type Single Compound
Formula GeTe
Role phase-change material
5

zinc sulfide/silica

ZnS/SiO2
Type Complex Compound
Formula
Role capping layer
6

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current spectral density

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • Si wafer
  • titanium nitride
Product

Ag4In3Sb67Te26-based projected phase-change memory device

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • Si wafer
  • titanium nitride
Product

Ag4In3Sb67Te26-based projected phase-change memory device

Size: not specified

Medium/Support: none

References

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