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C60 fullerene/graphene vertical field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

n-doped silicon

n+ Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

graphene stripe

graphene
Type Nano Material
Formula
Role semiconductor layer
4

(C60-Ih)[5,6]fullerene film

buckminsterfullerene film fullerene assembled film C60 fullerene film fullerene-C60 film [60]fullerene film buckyball film C60 film C60 film
Type Nano Material
Formula
Role semiconductor layer
5

silver

Type Single Compound
Formula Ag
Role source
6

silver

Type Single Compound
Formula Ag
Role drain

Properties

General physical and chemical properties

Property Value Source
charge neutral point dependent on graphene doping density

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

C60 fullerene/graphene vertical field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
Product

C60 fullerene/graphene vertical field-effect transistor

References

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