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InGaN/GaN multi-quantum-well light-emitting diode

Based on

1 Articles
2015 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

semiconducting single-walled carbon nanotubes

single walled carbon nanotubes single-walled carbon nanotubes single-wall carbon nanotubes sc-SWCNT SW-CNT SWCNT SWNT
Type
Formula
Role
3

gallium nitride

Type Single Compound
Formula GaN
Role buffer layer
4

gallium nitride

Type
Formula GaN
Role
5

silicon-doped gallium nitride

n-GaN
Type Complex Compound
Formula
Role n-electrode contact
6

InGaN/GaN multi-quantum well

Type Nano Material
Formula
Role multi-quantum well layer
7

Mg-doped GaN

p-GaN
Type Complex Compound
Formula
Role p-electrode contact layer
8

tin-doped indium oxide

indium tin oxide ITO
Type
Formula
Role
9

chromium

Type Single Compound
Formula Cr
Role adhesion layer
10

gold

Type
Formula Au
Role

Properties

General physical and chemical properties

Property Value Source
electric current

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Applications

Area Application Source
lighting devices

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Characterization

Method Source
electroluminescence

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Biological effects

Preparation

References

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