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Al-Ge-Al NW heterostructure FET

Based on

1 Articles
2015 Most recent source

Composition

1

heavily doped silicon

p++ Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

aluminum-terminated germanium nanowires

Al-Ge-Al nanowires Al-Ge-Al NW
Type Nano Material
Formula
Role semiconductor layer
4

aluminium

aluminum
Type
Formula Al
Role
5

titanium/gold

Ti/Au
Type Complex Compound
Formula
Role source
6

titanium/gold

Ti/Au
Type Complex Compound
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • air
  • heavily doped silicon
Product

Al-Ge-Al NW heterostructure FET

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • air
  • heavily doped silicon
Product

Al-Ge-Al NW heterostructure FET

References

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