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Ag4In3Sb67Te26-based phase-change memory device

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type
Formula Si
Role
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

AIST

Type Single Compound
Formula Ag4In3Sb67Te26
Role projection material
4

zinc sulfide/silica

ZnS/SiO2
Type Complex Compound
Formula
Role capping layer
5

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role capping layer

Properties

General physical and chemical properties

Property Value Source
current spectral density

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Applications

Area Application Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • Si wafer
  • AIST
Product

Ag4In3Sb67Te26-based phase-change memory device

References

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