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CH3NH3PbI3 field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

p-doped silicon

p-doped Si
Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
3

divinyltetramethyldisiloxane bis(benzocyclobutene) monomer

divinyltetramethyldisiloxane bis(benzocyclobutene) divinyltetramethyldisiloxane-bis(benzocyclobutene) divinyl-tetramethylsiloxane-bis(benzocyclobutene) divinylsiloxane-bis-benzocyclobutene divinylsiloxane-bisbenzocyclobutene BCB 3022-46 BCB monomer BCB
Type
Formula C24H30OSi2
Role
4

methylammonium lead iodide perovskite

methylammonium triiodoplumbate(II) methylammonium lead(II) iodide methylammonium lead triiodide methylammonium lead iodide MAPI
Type
Formula CH6I3NPb
Role
5

silver

Type Single Compound
Formula Ag
Role source
6

silver

Type Single Compound
Formula Ag
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current dependent on zero gate voltage

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon
  • p-doped silicon
  1. qBe1asX
  2. xFliqorxO2
Product

CH3NH3PbI3 field-effect transistor

References

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