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molybdenum selenide crystal-based field effect transistors

Based on

1 Articles
2015 Most recent source

Composition

1

p-doped silicon

p-Si
Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

Au/Ti film

Type Nano Material
Formula
Role back gate
4

hexagonal boron nitride

h-BN hBN
Type
Formula BN
Role
5

molybdenum selenide multi-layered flakes

MoSe2 flakes
Type
Formula
Role
6

Au/Ti film

Type Nano Material
Formula
Role source
7

Au/Ti film

Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on applied laser power

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • titanium
  • p-Si/SiO2
Product

molybdenum selenide crystal-based field effect transistors

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • titanium
  • p-Si/SiO2
Product

molybdenum selenide crystal-based field effect transistors

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • titanium
  • p-Si/SiO2
Product

molybdenum selenide crystal-based field effect transistors

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • titanium
  • p-Si/SiO2
Product

molybdenum selenide crystal-based field effect transistors

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • titanium
  • p-Si/SiO2
Product

molybdenum selenide crystal-based field effect transistors

Size: not specified

Medium/Support: none

References

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