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InAs nanowire field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

n+-doped silicon

Type Complex Compound
Formula
Role back gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

Si-doped InAs nanowires

Type Nano Material
Formula
Role conducting channel
4

lanthanum lutetium oxide

Type Single Compound
Formula LaLuO3
Role gate dielectrics
5

titanium

Type Single Compound
Formula Ti
Role adhesion layer
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain
8

gold

Type Single Compound
Formula Au
Role upper gate

Properties

General physical and chemical properties

Property Value Source
back gate dielectric capacitance dependent on detection method

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

References

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