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transistor

Based on

1 Articles
2015 Most recent source

Composition

1

heavily boron doped silicon

p++ silicon
Type Complex Compound
Formula
Role gate
2

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role gate dielectrics
3

graphene nanosheets

graphene sheets GNS sheets graphene GNS GN GR Gr
Type Nano Material
Formula
Role channels
4

palladium

Type Single Compound
Formula Pd
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge neutral electric field

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • tetrakis(dimethylamido)-hafnium(IV)
  • water
  • heavily boron doped silicon
  1. Y2T8cO8
Product

transistor

Size: not specified

Medium/Support: none

References

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