Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

quasi-ballistic three-dimensional 3D topological insulator nanowire device

Based on

1 Articles
2015 Most recent source

Composition

1

phosphorus-doped amorphous silicon

n-Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

topological insulator nanowires

Bi1.33Sb0.67Se3 nanowires TI nanowires
Type
Formula
Role
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role electrodes
6

2,3,5,6-tetrafluoro-7,7,8,8,-tetracyanoquinodimethane

2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane tetrafluoro-7,7,8,8-tetracyanoquinodimethane tetrafluoro-tetracyano-quinodimethane tetrafluoro tetracyanoquinodimethane tetrafluoro-tetracyanoquinodimethane F4-TCNQ F4-TCNQ F4TCNQ F4TCNQ
Type
Formula C12F4N4
Role

Properties

General physical and chemical properties

Property Value Source
differential conductance

3 more entries available to subscribers only.

Or, view sample content

Applications

Area Application Source
electronics

0 more entry available to subscribers only.

Or, view sample content

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • bismuth tin selenide
  • Si/SiO2 substrate
  1. h2oPM7
Product

quasi-ballistic three-dimensional 3D topological insulator nanowire device

Method 2

Type: Physical formation
Source:
Starting materials
  • bismuth tin selenide
  • Si/SiO2 substrate
  1. MA6MFp
Product

quasi-ballistic three-dimensional 3D topological insulator nanowire device

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial