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metal semiconductor field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

p-type silicon substrate

SiO2/p+ -Si substrate
Type Complex Compound
Formula
Role substrate
2

molybdenum sulfide film

MoS2film
Type Nano Material
Formula
Role channels
3

nickel oxide

NiOx
Type Single Compound
Formula NiO(x)
Role Schottky gate
4

titanium-gold nanostructured material

titanium-gold film Ti-Au film
Type Nano Material
Formula
Role source
5

titanium-gold nanostructured material

titanium-gold film Ti-Au film
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  • p-type silicon substrate
Product

metal semiconductor field-effect transistor

Size: not specified

Medium/Support: none

References

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