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MoS2-based-ferroelectric field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

Si/SiO2 substrate

Type Complex Compound
Formula
Role substrate
2

TiO2/Ir

Type
Formula
Role
3

titanium/gold film

Ti/Au film
Type Nano Material
Formula
Role source
4

lead zirconium titanate

PZT
Type Single Compound
Formula PbZr0.4Ti0.6O3
Role gate dielectrics
5

bilayer molybdenum(IV) sulfide monolayer

bilayer molybdenum(IV) sulfide monolayer bilayered molybdenum sulfide nanosheets nanoflakes of molybdenum disulfide molybdenum(IV) sulfide nanosheets multilayered molybdenum disulfide molybdenum disulfide nanosheets few-layer molybdenum disulfide molybdenum(IV) sulfide bilayer molybdenum sulfide nanosheets bilayer molybdenum disulfide molybdenum sulfide nanosheet few-layer molybdenum sulfide bilayer molybdenum sulfide molybdenum sulfide bilayer few-layered MoS2 crystals few-layer MoS2 nanosheets two-layer MoS2 nanosheets layered MoS2 2D material trilayer MoS2 nanoflakes few-layer MoS2 monolayer trilayer MoS2 nanosheets few-layer MoS2 crystals bilayer MoS2 nanosheets few-layer MoS2 flakes bilayer MoS2 crystals bilayered MoS2 flakes two-dimensional MoS2 trilayer MoS2 sheets trilayered MoS2 film bilayer MoS2 sheets 2L MoS2 nanoflakes 2L MoS2 nanosheets few-layers of MoS2 3L MoS2 nanosheets 3L MoS2 nanoflakes 2D MoS2 thin film bilayer MoS2 film multilayered MoS2 2-monolayer MoS2 MoS2 nanosheets MoS2 nanoflakes MoS2 nanoflakes 2-L-MoS2 flakes 3-L-MoS2 flakes few-layer MoS2 MoS2 crystals bi-layer MoS2 trilayer MoS2 MoS2 trilayer bilayer MoS2 MoS2 bilayer layered MoS2 bilayer MoS2 MoS2 sheets MoS2 flakes MoS2 flake 2D MoS2 2L MoS2 2L-MoS2
Type
Formula
Role
6

titanium/gold film

Ti/Au film
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
cyclic voltammogram

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  1. VZatAijSbmHJK
  2. kOSNAhAARu8TJSvdYPEpIkofVQEf
Product

MoS2-based-ferroelectric field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  1. JHnTYo0WfBWZK
  2. 6V16Oty5lN7KT4b6sAGWdXVUE38A
Product

MoS2-based-ferroelectric field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  1. yTxsUutc8TeNb
  2. RcP7VKOZaQgi76e6tZNO9M2qpXG4
Product

MoS2-based-ferroelectric field-effect transistor

Size: not specified

Medium/Support: none

References

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