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MoS2-based-ferroelectric field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

Si/SiO2 substrate

Type Complex Compound
Formula
Role substrate
2

TiO2/Ir

Type
Formula
Role
3

titanium/gold film

Ti/Au film
Type Nano Material
Formula
Role source
4

lead zirconium titanate

PZT
Type Single Compound
Formula PbZr0.4Ti0.6O3
Role gate dielectrics
5

bilayer molybdenum(IV) sulfide monolayer

bilayered molybdenum sulfide nanosheets nanoflakes of molybdenum disulfide molybdenum(IV) sulfide nanosheets multilayered molybdenum disulfide molybdenum disulfide nanosheets few-layer molybdenum disulfide molybdenum sulfide nanosheets bilayer molybdenum disulfide molybdenum sulfide nanosheet molybdenum sulfide bilayer few-layered MoS2 crystals few-layer MoS2 nanosheets two-layer MoS2 nanosheets layered MoS2 2D material few-layer MoS2 crystals bilayer MoS2 nanosheets few-layer MoS2 flakes bilayered MoS2 flakes bilayer MoS2 crystals two-dimensional MoS2 bilayer MoS2 sheets few-layers of MoS2 2L MoS2 nanoflakes multilayered MoS2 bilayer MoS2 film 2D MoS2 thin film 2-monolayer MoS2 MoS2 nanosheets MoS2 nanoflakes MoS2 nanoflakes 2-L-MoS2 flakes few-layer MoS2 MoS2 crystals bi-layer MoS2 bilayer MoS2 MoS2 bilayer layered MoS2 bilayer MoS2 MoS2 flakes MoS2 sheets MoS2 flake 2D MoS2 2L-MoS2 2L MoS2
Type
Formula
Role
6

titanium/gold film

Ti/Au film
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source
cyclic voltammogram

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Applications

Area Application Source
data storage

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Characterization

Method Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  1. TE2lCeQEYdCEH
  2. v9Edp7Rkq7vNZynTDOUyf6Roefr0
Product

MoS2-based-ferroelectric field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  1. DjsnBY49xacFl
  2. w0RVYos6lzBpQ2YkPRcCGsfh0J5W
Product

MoS2-based-ferroelectric field-effect transistor

Method 3

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  1. AgQ5PJ4Cm8ihZ
  2. ts46W36PeVzOlCvQVvEfca5J0KWA
Product

MoS2-based-ferroelectric field-effect transistor

References

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