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Ge2Sb2Te5-based phase-change memory device

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

chromium

Type Single Compound
Formula Cr
Role adhesion layer
4

nickel

Type Single Compound
Formula Ni
Role bottom electrode
5

Ni filaments/NiO film

Type
Formula
Role
6

germanium antimony telluride

Ge-Sb-Te ternary alloy Ge2Sb2Te5 GST
Type
Formula Ge2Sb2Te5
Role
7

titanium tungsten

Type Single Compound
Formula TiW
Role top electrode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current dependent on set-reset processes

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

Ge2Sb2Te5-based phase-change memory device

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/Si substrate
  • chromium
Product

Ge2Sb2Te5-based phase-change memory device

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/Si substrate
  • chromium
Product

Ge2Sb2Te5-based phase-change memory device

Size: not specified

Medium/Support: none

References

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