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Pt/HfOx/TiN based 3D vertical resistive switching device

Based on

1 Articles
2014 Most recent source

Composition

1

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
2

platinum

Type Single Compound
Formula Pt
Role plane electrode
3

titanium nitride

Type Single Compound
Formula TiN
Role pillar electrode
4

hafnium sub-oxide

hafnium suboxide hafnium oxide hafnia HfOx
Type Single Compound
Formula HfO(x)
Role switching oxide

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
direct current dependent on plane electrode

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
transmission electron microscopy

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Biological effects

Preparation

References

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