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Pt/HfOx/TiN based 3D vertical resistive switching device

Based on

1 Articles
2014 Most recent source

Composition

1

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
2

platinum

Type Single Compound
Formula Pt
Role plane electrode
3

titanium nitride

Type Single Compound
Formula TiN
Role pillar electrode
4

hafnium sub-oxide

hafnium suboxide hafnium oxide hafnia HfOx
Type Single Compound
Formula HfO(x)
Role switching oxide

Properties

General physical and chemical properties

Property Value Source
direct current dependent on plane electrode

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Applications

Area Application Source
electronics

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Characterization

Method Source
transmission electron microscopy

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Biological effects

Preparation

References

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