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double-gated metal-oxide-semiconductor field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

phosphorus/arsenic doped silicon

P/As-doped Si
Type Complex Compound
Formula
Role channel layer
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

aluminium

aluminum
Type Single Compound
Formula Al
Role gate
4

substoichiometric aluminum oxide

noncrystalline aluminum oxide anodized aluminum oxide aluminium suboxide oxidized aluminium aluminium oxide aluminum oxide alumina
Type Single Compound
Formula AlO(x)
Role dielectric layer
5

aluminium

aluminum
Type Single Compound
Formula Al
Role upper gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charging energy

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • oxygen
Product

double-gated metal-oxide-semiconductor field-effect transistor

Size: not specified

Medium/Support: none

References

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