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benzyl viologen-doped back-gated MoS2 field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

p-doped Si/SiO2

Type Complex Compound
Formula
Role gate
2

Ni/Au electrode

Ni/Au film
Type Nano Material
Formula
Role source
3

Ni/Au electrode

Ni/Au film
Type Nano Material
Formula
Role drain
4

benzyl viologen-doped MoS2 flakes

BV-doped MoS2 flakes
Type Nano Material
Formula
Role active layer

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  • p-doped Si/SiO2
  1. TGfQtDlFngVnH8y5grz0Dg
Product

benzyl viologen-doped back-gated MoS2 field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  • p-doped Si/SiO2
  1. Dhv8E3DDyxcLzQwN91PMuM
Product

benzyl viologen-doped back-gated MoS2 field-effect transistor

Method 3

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  • p-doped Si/SiO2
  1. vheerfcbjcFv70OG0PYDPB
Product

benzyl viologen-doped back-gated MoS2 field-effect transistor

Method 4

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  • p-doped Si/SiO2
  1. myTUiecTYRic8UEN19Apjh
Product

benzyl viologen-doped back-gated MoS2 field-effect transistor

References

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