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s-SWCNT/a-IGZO antiambipolar p-n heterojunction

Based on

1 Articles
2015 Most recent source

Composition

1

n-doped silicon

n-type silicon n-type Si silicon n-Si
Type Single Compound
Formula Si
Role substrate
2

hafnium sub-oxide

hafnium suboxide hafnium oxide hafnia HfOx
Type
Formula HfO(x)
Role
3

titanium

Type Single Compound
Formula Ti
Role adhesion layer
4

gold

Type Single Compound
Formula Au
Role electrodes
5

indium gallium zinc oxide thin film

n-type a-IGZO thin film a-IGZO thin film a-IGZO film
Type
Formula
Role
6

semiconducting p-type single-walled carbon nanotubes

p-type single-walled carbon nanotubes p-type s-SWCNT s-SWCNT
Type
Formula
Role
7

molybdenum

Type Single Compound
Formula Mo
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
binary frequency shift keying plot dependent on offset voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • n-doped silicon
  1. PmFX7QE
  2. 0V51v2S2AU
Product

s-SWCNT/a-IGZO antiambipolar p-n heterojunction

Size: not specified

Medium/Support: none

References

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