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MoS2-based-field effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

p-doped silicon

p-doped Si
Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role back gate
3

titanium

Type Single Compound
Formula Ti
Role source
4

titanium

Type Single Compound
Formula Ti
Role drain
5

molybdenum sulfide nanosheets

MoS2 nanosheets MoS2 film
Type Nano Material
Formula
Role channels

Properties

General physical and chemical properties

Property Value Source
channel current deference before and after hexadecanethiol treatment

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
Product

MoS2-based-field effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
Product

MoS2-based-field effect transistor

Method 3

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
Product

MoS2-based-field effect transistor

Method 4

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
Product

MoS2-based-field effect transistor

Method 5

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
Product

MoS2-based-field effect transistor

References

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