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back-gated MoS2 field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

p-doped Si/SiO2

Type Complex Compound
Formula
Role gate
2

Ni/Au electrode

Ni/Au film
Type Nano Material
Formula
Role source
3

Ni/Au electrode

Ni/Au film
Type Nano Material
Formula
Role drain
4

molybdenum(IV) sulfide

molybdenum disulphide molybdenum disulfide molybdenum sulfide
Type Single Compound
Formula MoS2
Role active layer

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  • p-doped Si/SiO2
  1. D07Czdvjn6FpKTcLgElqMP
Product

back-gated MoS2 field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  • p-doped Si/SiO2
  1. TnVX7QhMD5Ppt7EP6dfwI2
Product

back-gated MoS2 field-effect transistor

Method 3

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  • p-doped Si/SiO2
  1. 3A7uR76xgD104ePfRf6sOf
Product

back-gated MoS2 field-effect transistor

Method 4

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  • p-doped Si/SiO2
  1. Bx7YGqMv6HcAfnPBAhvUik
Product

back-gated MoS2 field-effect transistor

References

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