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back-gated MoS2 field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

p-doped Si/SiO2

Type Complex Compound
Formula
Role gate
2

Ni/Au electrode

Ni/Au film
Type Nano Material
Formula
Role source
3

Ni/Au electrode

Ni/Au film
Type Nano Material
Formula
Role drain
4

molybdenum sulfide thin film

multiple-layered MoS2 film molybdenum disulfide film 3-layer MoS2 thin film multilayer MoS2 film trilayer MoS2 flakes few-layer MoS2 film ultrathin MoS2 film MoS2 few-layer film MoS2 multilayers MoS2 thin film trilayer MoS2 MoS2 trilayer 2D MoS2 film 3L MoS2 film MoS2 sheets MoS2 film
Type Nano Material
Formula
Role active layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  • p-doped Si/SiO2
  1. 23SqLf7EMehhLQN087f0rd
Product

back-gated MoS2 field-effect transistor

Size: not specified

Medium/Support: none

References

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