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ReSe2-based-field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

chromium/gold electrode material

Cr/Au electrode material gold/chromium bilayer chromium-gold layer chromium/gold film chromium-gold film Cr/Au bilayer chromium/gold Au/Cr bilayer gold surface Cr/Au layer Cr-Au film Cr/Au film Cr/Au
Type Nano Material
Formula
Role source
2

rhenium diselenide nanosheets

ReSe2 nanosheets
Type Nano Material
Formula
Role channels
3

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role insulating layer
4

chromium/gold electrode material

Cr/Au electrode material gold/chromium bilayer chromium-gold layer chromium/gold film chromium-gold film Cr/Au bilayer chromium/gold Au/Cr bilayer gold surface Cr/Au layer Cr-Au film Cr/Au film Cr/Au
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source
ammonia adsorption energy

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Applications

Area Application Source
electronics

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Characterization

Method Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • rhenium diselenide
Product

ReSe2-based-field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • rhenium diselenide
Product

ReSe2-based-field-effect transistor

References

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