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semiconducting double-walled carbon nanotube-based field effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

palladium

Type Single Compound
Formula Pd
Role gate electrode
2

titanium

Type Single Compound
Formula Ti
Role adhesion layer
3

boron-doped p-type Si

p-type Si
Type Complex Compound
Formula
Role gate
4

silicon oxide

SiOx
Type Complex Compound
Formula
Role gate dielectrics
5

semiconducting double-walled carbon nanotube

semiconducting double-walled CNT s-DWCNT
Type Nano Material
Formula
Role channels
6

palladium

Type Single Compound
Formula Pd
Role source
7

palladium

Type Single Compound
Formula Pd
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • boron-doped p-type Si with a thermally grown oxide
Product

semiconducting double-walled carbon nanotube-based field effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • boron-doped p-type Si with a thermally grown oxide
Product

semiconducting double-walled carbon nanotube-based field effect transistor

Size: not specified

Medium/Support: none

References

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