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Ph-BTBT-10 film-based bottom-gate/bottom-contact field effect transistor with PFBT-modified Au electrodes

Based on

1 Articles
2015 Most recent source

Composition

1

p+-Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

gold

Type Single Compound
Formula Au
Role source
4

gold

Type Single Compound
Formula Au
Role drain
5

2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene film

Ph-BTBT-10 film
Type Nano Material
Formula
Role channels
6

2,3,4,5,6-pentafluorothiophenol

pentafluorobenzene-1-thiol pentafluorobenzenethiol pentafluorothiophenol perfluorothiophenol HS-PhF5 PFBT
Type Single Compound
Formula C6HF5S
Role Ohmic contacts

Properties

General physical and chemical properties

Property Value Source
charge carrier mobility

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gold
  • SiO2/p+-Si
Product

Ph-BTBT-10 film-based bottom-gate/bottom-contact field effect transistor with PFBT-modified Au electrodes

Method 2

Type: Physical formation
Source:
Starting materials
  • gold
  • SiO2/p+-Si
Product

Ph-BTBT-10 film-based bottom-gate/bottom-contact field effect transistor with PFBT-modified Au electrodes

References

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