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back-gated graphene field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
2

CVD polycrystalline graphene

polycrystalline graphene monolayer graphene
Type Nano Material
Formula
Role channel layer
3

titanium/palladium

Type Complex Compound
Formula
Role electrodes
4

silicon

Type Single Compound
Formula Si
Role gate

Properties

General physical and chemical properties

Property Value Source
contact resistance dependent on center or edge part of graphene material used for device fabrication

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Applications

Area Application Source
tools/devices

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. qIiZjRlyvxBHKDTt5EgQVaYyUwhpmUnX3JaV
Product

back-gated graphene field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  1. ZjIW07tZ7jIBkvQTg8beOBb6rpWBwrlmJpaI
Product

back-gated graphene field-effect transistor

Method 3

Type: Physical formation
Source:
Starting materials
  1. bCNlHBzZkvSsscrUNtxdtMfZmlGjL9E9nTWf
Product

back-gated graphene field-effect transistor

Method 4

Type: Physical formation
Source:
Starting materials
  1. K7zbzWaNJEZTnfoKhFx6OZOiTGasFHqsV9mX
Product

back-gated graphene field-effect transistor

References

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