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memory FET

Based on

1 Articles
2014 Most recent source

Composition

1

p-type Si

p+-Si
Type Complex Compound
Formula
Role black gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

titanium

Type Single Compound
Formula Ti
Role adhesion layer
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role drain
6

gold

Type Single Compound
Formula Au
Role source
7

O2 plasma-treated MoS2

O2-doped MoS2
Type Nano Material
Formula
Role channel layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain-source current dependent on cycle number

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • p-type Si
Product

memory FET

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • p-type Si
Product

memory FET

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • p-type Si
Product

memory FET

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • p-type Si
Product

memory FET

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • p-type Si
Product

memory FET

Size: not specified

Medium/Support: none

References

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