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InAs NW based field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon/silica

Type Complex Compound
Formula
Role substrate
2

silicon nitride

Type Single Compound
Formula Si3N4
Role dielectric layer
3

InAs NW grown on (111)B InAs substrate

InAs nanowires InAs NW
Type Nano Material
Formula
Role channel layer
4

nickel/gold

Type Complex Compound
Formula
Role source
5

nickel/gold

Type Complex Compound
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
conduction sub-band energy dependent on sub-band number

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon/silica
  • silicon nitride
  1. 4hQgqIpeBkMESIXavZdRFWIx8RkGIWmcob5lVOLnGKwbz1Xz5evh7sc5k1ULfQyLnZGnzv8cpMJJimo6
Product

InAs NW based field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon/silica
  • silicon nitride
  1. jlHn2SQFExRGNV4gSt6LddMKrBp8HWyUWciJBhqAlXOIT3WGftAEowHt2e9Dnf97iY9Rh3qJSJmBxidm
Product

InAs NW based field-effect transistor

Size: not specified

Medium/Support: none

References

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