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bilayer WSe2/few-layer MoS2 heterojunction p-n diode

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

monolayer/bilayer WSe2 flakes

Type
Formula
Role
4

few-layer molybdenum disulfide

few-layer MoS2 flakes
Type
Formula
Role
5

nickel

Type Single Compound
Formula Ni
Role Ohmic contacts
6

gold

Type Single Compound
Formula Au
Role Ohmic contacts

Properties

General physical and chemical properties

Property Value Source
drain current dependent on gate voltage

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Applications

Area Application Source
electronics

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Characterization

Method Source
electroluminescence dependent on electric current

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • tungsten(IV) selenide
  • Si/SiO2
Product

bilayer WSe2/few-layer MoS2 heterojunction p-n diode

References

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