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complementary metal-oxide-semiconductor inverter

Based on

1 Articles
2014 Most recent source

Composition

1

Si/SiO2

Type Complex Compound
Formula
Role substrate
2

titanium

Type Single Compound
Formula Ti
Role adhesion layer
3

titanium

Type Single Compound
Formula Ti
Role adhesion layer
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

titanium

Type Single Compound
Formula Ti
Role adhesion layer
6

gold

Type Single Compound
Formula Au
Role drain
7

gold

Type Single Compound
Formula Au
Role source
8

gold

Type Single Compound
Formula Au
Role source
9

gold

Type Single Compound
Formula Au
Role drain
10

few-layer phosphorene

Type Nano Material
Formula
Role channel layer
11

MoS2 nanoflakes

MoS2 flakes
Type Nano Material
Formula
Role channel layer
12

aluminium

aluminum
Type Single Compound
Formula Al
Role seed layer
13

aluminium

aluminum
Type Single Compound
Formula Al
Role seed layer
14

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate dielectrics
15

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate dielectrics
16

titanium

Type Single Compound
Formula Ti
Role adhesion layer
17

titanium

Type Single Compound
Formula Ti
Role adhesion layer
18

gold

Type Single Compound
Formula Au
Role gate

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • silicon
Product

complementary metal-oxide-semiconductor inverter

References

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