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MICM device with patterned ZnO on P++-Si/10-nm HfO2

Based on

1 Articles
2015 Most recent source

Composition

1

B-doped p-type Si

P++-Si
Type Complex Compound
Formula
Role anode
2

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role insulators
3

example of Group ll-VI semiconductor nanocrystals

example of metal or semiconductor nanocrystals example of semiconductor nanocrystals example of semiconductor nanocrystal zinc oxide nanoparticles example of nanocrystals zinc oxide nanocrystals nanocrystalline ZnO ZnO nanoparticles ZnO nanocrystals zinc oxide NP zinc oxide NC ZnO NC ZnO NP
Type Nano Material
Formula
Role cathode buffer layer
4

gold

Type Single Compound
Formula Au
Role cathode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current density dependent on current direction

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • B-doped p-type Si
  1. t8erQfKiS
Product

MICM device with patterned ZnO on P++-Si/10-nm HfO2

Size: not specified

Medium/Support: none

References

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