Loading ...

topological insulator bismuth antimony telluride thin film

Based on

1 Articles
2015 Most recent source

Composition

1

indium(III) phosphide

indium phosphide
Type Single Compound
Formula InP
Role substrate
2

bismuth antimony telluride

(Bi0.16Sb0.84)2Te3
Type
Formula
Role
3

substoichiometric aluminum oxide

noncrystalline aluminum oxide anodized aluminum oxide aluminium suboxide oxidized aluminium aluminium oxide aluminum oxide alumina
Type Single Compound
Formula AlO(x)
Role gate dielectrics
4

titanium/gold

Ti/Au
Type Complex Compound
Formula
Role electrodes
5

titanium/gold

Ti/Au
Type Complex Compound
Formula
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electrical conductivity dependent on magnetic field

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
insulation

More information available to subscribers only.

Or, view sample content

Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • bismuth
  • antimony
  • indium(III) phosphide
See all (4)
Product

topological insulator bismuth antimony telluride thin film

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • bismuth
  • antimony
  • indium(III) phosphide
See all (4)
Product

topological insulator bismuth antimony telluride thin film

Size: not specified

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial