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graphene oxide-modified metal-oxide-semiconductor field effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

p-doped silicon

p-Si
Type Complex Compound
Formula
Role substrate
2

n+-doped silicon

n+-Si
Type Complex Compound
Formula
Role substrate
3

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
4

copper

Type Single Compound
Formula Cu
Role source
5

copper

Type Single Compound
Formula Cu
Role gate
6

copper

Type Single Compound
Formula Cu
Role drain
7

chromium

Type Single Compound
Formula Cr
Role buffer layer
8

graphene oxide film

GO film
Type Nano Material
Formula
Role cathode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
emission current dependent on anode voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • copper
  • n+-doped silicon
See all (4)
Product

graphene oxide-modified metal-oxide-semiconductor field effect transistor

Size: not specified

Medium/Support: none

References

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