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InSb QD quantum device

Based on

1 Articles
2015 Most recent source

Composition

1

n-doped silicon

n-Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

indium antimonide nanowires

InSb nanowires
Type Nano Material
Formula
Role conducting channel
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
average capacitance

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Applications

Area Application Source
electronics

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Characterization

Method Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

InSb QD quantum device

Method 2

Type: Physical formation
Source:
Starting materials
Product

InSb QD quantum device

Method 3

Type: Physical formation
Source:
Starting materials
Product

InSb QD quantum device

Method 4

Type: Physical formation
Source:
Starting materials
Product

InSb QD quantum device

References

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