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field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role bottom gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

hexagonal boron nitride

h-BN hBN
Type
Formula BN
Role
4

molybdenum sulfide nanoflakes

molybdenum sulfide trilayer 3-layer MoS2 flake MoS2 nanoflakes trilayer MoS2 MoS2 trilayer MoS2 flakes
Type Nano Material
Formula
Role channels
5

multi-layer graphene sheets

multilayer graphene sheets five-layer thick graphene five-layered graphene multi-layer graphene multilayer graphene pentalayer graphene five layer graphene five-layer graphene few layer graphene few-layer graphene 5-layer graphene graphene sheets graphene 5L Gr FLG 5LG
Type Nano Material
Formula
Role electrodes
6

hexagonal boron nitride

h-BN hBN
Type
Formula BN
Role
7

chromium/palladium/gold film

Cr/Pd/Au film
Type Nano Material
Formula
Role source
8

chromium/palladium/gold film

Cr/Pd/Au film
Type Nano Material
Formula
Role drain
9

chromium/palladium/gold film

Cr/Pd/Au film
Type Nano Material
Formula
Role upper gate

Properties

General physical and chemical properties

Property Value Source
drain current dependent on bottom gate voltage

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Applications

Area Application Source
optoelectronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • hexagonal boron nitride
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  2. CxUbzPoLzld
Product

field-effect transistor

References

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