Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role bottom gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

hexagonal boron nitride

h-BN hBN
Type
Formula BN
Role
4

molybdenum sulfide nanoflakes

molybdenum sulfide trilayer 3-layer MoS2 flake MoS2 nanoflakes trilayer MoS2 MoS2 trilayer MoS2 flakes
Type Nano Material
Formula
Role channels
5

multi-layer graphene sheets

multilayer graphene sheets five-layer thick graphene five-layered graphene multi-layer graphene multilayer graphene pentalayer graphene five layer graphene five-layer graphene few-layer graphene few layer graphene 5-layer graphene graphene sheets graphene 5L Gr FLG 5LG
Type Nano Material
Formula
Role electrodes
6

hexagonal boron nitride

h-BN hBN
Type
Formula BN
Role
7

chromium/palladium/gold film

Cr/Pd/Au film
Type Nano Material
Formula
Role source
8

chromium/palladium/gold film

Cr/Pd/Au film
Type Nano Material
Formula
Role drain
9

chromium/palladium/gold film

Cr/Pd/Au film
Type Nano Material
Formula
Role upper gate

Properties

General physical and chemical properties

Property Value Source
drain current dependent on bottom gate voltage

2 more entries available to subscribes only.

Or, view sample content

Applications

Area Application Source
optoelectronics

0 more entry available to subscribes only.

Or, view sample content

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • hexagonal boron nitride
  1. 52OL77q1vXmFhEyu84GW80EKj1rYb9Oa
  2. ukvo1odsJL9
Product

field-effect transistor

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial