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resistive memory device

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

CrNi

Type Complex Compound
Formula
Role adhesion layer
4

palladium

Type Single Compound
Formula Pd
Role bottom electrode
5

oxygen deficient tantalum oxide

tantalum suboxide tantalum oxide TaO2-x TaOx TaOy TaOx
Type Single Compound
Formula TaO(x)
Role resistance-controlling layer
6

tantalum pentoxide

tantalum(V) oxide tantalum oxide
Type Single Compound
Formula O5Ta2
Role switching layer
7

palladium

Type Single Compound
Formula Pd
Role top electrode
8

gold

Type Single Compound
Formula Au
Role top electrode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
activation energy for electrical conductivity dependent on resistance state

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

resistive memory device

Size: not specified

Medium/Support: none

References

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