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field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

hexagonal boron nitride

h-BN hBN
Type Single Compound
Formula BN
Role passivation layer
4

multi-layer graphene sheets

multilayer graphene sheets five-layer thick graphene five-layered graphene multi-layer graphene multilayer graphene pentalayer graphene five layer graphene five-layer graphene few-layer graphene few layer graphene 5-layer graphene graphene sheets graphene 5L Gr FLG 5LG
Type Nano Material
Formula
Role electrodes
5

molybdenum(IV) sulfide

molybdenum disulphide molybdenum disulfide molybdenum sulfide
Type Single Compound
Formula MoS2
Role channels
6

hexagonal boron nitride

h-BN hBN
Type Single Compound
Formula BN
Role passivation layer
7

chromium/palladium/gold film

Cr/Pd/Au film
Type Nano Material
Formula
Role source
8

chromium/palladium/gold film

Cr/Pd/Au film
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • hexagonal boron nitride
  1. 9NuFxiJkOw
  2. IVxCJunUMKf
Product

field-effect transistor

References

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