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FET based on C60 crystals with layer of (3-pyrrolinium)(CdCl3) crystals on top

Based on

1 Articles
2015 Most recent source

Composition

1

highly doped silicon modified by divinyltetramethyldisiloxane bis(benzocyclobutene)

highly doped silicon modified by BCB
Type Complex Compound
Formula
Role gate
2

C60 ribbons/(3-pyrrolinium)(CdCl3) ribbons

Type Nano Material
Formula
Role channel layer
3

gold

Type Single Compound
Formula Au
Role source
4

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

FET based on C60 crystals with layer of (3-pyrrolinium)(CdCl3) crystals on top

References

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