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perovskite/IC60BA-based field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

B-doped Si

p-Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

methylammonium lead iodide perovskite

methylammonium triiodoplumbate(II) methylammonium lead(II) iodide methylammonium lead triiodide methylammonium lead iodide MAPI
Type
Formula CH6I3NPb
Role
4

C60-indene bis-adduct

indene-C60 bis adduct C60-indene bis-adduct C60Ind2 IC60BA ICBA
Type
Formula
Role
5

silver

Type Single Compound
Formula Ag
Role source
6

silver

Type Single Compound
Formula Ag
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • p-Si/SiO2 substrate
  • methylammonium lead iodide perovskite
  1. Cfr0qaInuNPdtb8
  2. MTpl
  3. f0mIsPGrYNyXTnWSqQR
Product

perovskite/IC60BA-based field-effect transistor

Size: not specified

Medium/Support: none

References

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