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side-gated graphene field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

Si wafer

Type Complex Compound
Formula
Role substrate
2

graphene

Type Nano Material
Formula
Role channel layer
3

chromium/gold electrode material

Cr/Au electrode material gold/chromium bilayer chromium-gold layer chromium/gold film chromium-gold film Cr/Au bilayer chromium/gold Au/Cr bilayer gold surface Cr/Au layer Cr-Au film Cr/Au film Cr/Au
Type Nano Material
Formula
Role drain
4

chromium/gold electrode material

Cr/Au electrode material gold/chromium bilayer chromium-gold layer chromium/gold film chromium-gold film Cr/Au bilayer chromium/gold Au/Cr bilayer gold surface Cr/Au layer Cr-Au film Cr/Au film Cr/Au
Type Nano Material
Formula
Role source
5

chromium/gold electrode material

Cr/Au electrode material gold/chromium bilayer chromium-gold layer chromium/gold film chromium-gold film Cr/Au bilayer chromium/gold Au/Cr bilayer gold surface Cr/Au layer Cr-Au film Cr/Au film Cr/Au
Type Nano Material
Formula
Role gate

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. WBjm
Product

side-gated graphene field-effect transistor

References

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