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fullerene-based field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

B-doped Si

p-Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

divinyltetramethyldisiloxane bis(benzocyclobutene) monomer

divinyltetramethyldisiloxane bis(benzocyclobutene) divinyltetramethyldisiloxane-bis(benzocyclobutene) divinyl-tetramethylsiloxane-bis(benzocyclobutene) divinylsiloxane-bis-benzocyclobutene divinylsiloxane-bisbenzocyclobutene BCB 3022-46 BCB monomer BCB
Type Single Compound
Formula C24H30OSi2
Role buffer layer
4

C60-indene bis-adduct

indene-C60 bis-adduct indene-C60 bis adduct C60Ind2 IC60BA ICBA
Type
Formula
Role
5

silver

Type Single Compound
Formula Ag
Role source
6

silver

Type Single Compound
Formula Ag
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • divinyltetramethyldisiloxane bis(benzocyclobutene) monomer
  • p-Si/SiO2 substrate
Product

fullerene-based field-effect transistor

References

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