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n-doped graphene-graphene oxide floating gate transistor memory

Based on

1 Articles
2015 Most recent source

Composition

1

polyethylene naphthalate

PEN
Type Polymer
Formula
Role substrate
2

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role gate
3

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role blocking dielectric
4

ammonia-functionalized graphene oxide

GO-NH3+
Type Nano Material
Formula
Role charge-trapping layer
5

poly(melamine-co-formaldehyde) cross-linked polyvinylpyrrolidone

cross-linked PVP cPVP
Type Polymer
Formula
Role tunneling dielectric layer
6

polyethyleneimine-doped graphene

PEI-doped graphene n-doped graphene
Type Nano Material
Formula
Role channel/source/drain

Properties

General physical and chemical properties

Property Value Source
Dirac voltage

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Applications

Area Application Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. 3ywd0yRnSeJzrv8CEhzivduWZfqT2NB7HHsJF
Product

n-doped graphene-graphene oxide floating gate transistor memory

References

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